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- Úvod
- Elektronika
- Obalové materiály
- Klopové krabice
- Transcend 8GB microSDHC410M UHS-I U1 (Class 10) A1 V10 MLC průmyslová paměťová karta (bez adaptéru), 100MB/s R, 22MB/s W
Transcend 8GB microSDHC410M UHS-I U1 (Class 10) A1 V10 MLC průmyslová paměťová karta (bez adaptéru), 100MB/s R, 22MB/s W
- Kompletní specifikace
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- Komentáře 0
- Transcend 8GB microSDHC410M UHS-I U1 (Class 10) A1 V10 MLC průmyslová paměťová karta (bez adaptéru), 100MB/s R, 22MB/s WNení skladem162 Kč134 Kč bez DPH
Kompletní specifikace
Built with top-quality MLC NAND flash chips, Transcend's microSD/SDHC 410M memory cards can endure operating temperatures from -25°C to 85°C; and set a new standard for consistent, long-term performance even in the harshest conditions. Moreover, these cards offer high-speed data transfer rates to satisfy the demanding performance and reliability requirements of embedded systems, such as transportation, telecommunication, and IoT applications.
Appearance
Dimensions 11 mm x 15 mm x 1 mm (0.43" x 0.59" x 0.04")
Form Factor
microSD flash card
Storage
Flash Type
MLC NAND flash
Capacity
8 GB
Operating Environment
Operating Voltage
2.7V ~ 3.6V
Drop Test
1.5m free fall
Operating Temperature
Standard Temp.-25°C (-13°F) ~ 85°C (185°F)
Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 0% ~ 95%
Shock
Acceleration: 490 m/s2 (standard holding time: 11 ms, semi-sine wave, velocity change: 3.44 m/s)
Vibration (Operating) 20 G (peak-to-peak), 20 Hz ~ 2,000 Hz (frequency)
Power
Power Consumption (Max.) 0.72 watt(s)
Performance
Read Speed (Max.) Up to 95 MB/s
Write Speed (Max.) Up to 50 MB/s
Terabytes Written (TBW) Up to 86 TBW
Note
Speed may vary due to host hardware, software, usage, and storage capacity.
Terabytes Written (TBW) expresses the endurance under the highest capacity.
Appearance
Dimensions 11 mm x 15 mm x 1 mm (0.43" x 0.59" x 0.04")
Form Factor
microSD flash card
Storage
Flash Type
MLC NAND flash
Capacity
8 GB
Operating Environment
Operating Voltage
2.7V ~ 3.6V
Drop Test
1.5m free fall
Operating Temperature
Standard Temp.-25°C (-13°F) ~ 85°C (185°F)
Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 0% ~ 95%
Shock
Acceleration: 490 m/s2 (standard holding time: 11 ms, semi-sine wave, velocity change: 3.44 m/s)
Vibration (Operating) 20 G (peak-to-peak), 20 Hz ~ 2,000 Hz (frequency)
Power
Power Consumption (Max.) 0.72 watt(s)
Performance
Read Speed (Max.) Up to 95 MB/s
Write Speed (Max.) Up to 50 MB/s
Terabytes Written (TBW) Up to 86 TBW
Note
Speed may vary due to host hardware, software, usage, and storage capacity.
Terabytes Written (TBW) expresses the endurance under the highest capacity.
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